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MTP3055V
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 μ Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
60
?
?
?
?
?
65
?
?
?
?
?
10
100
100
Vdc
mV/ ° C
μ Adc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V DS = V GS , I D = 250 μ Adc)
Temperature Coefficient (Negative)
Static Drain ? Source On ? Resistance (V GS = 10 Vdc, I D = 6.0 Adc)
Drain ? Source On ? Voltage (V GS = 10 Vdc)
(I D = 12 Adc)
(I D = 6.0 Adc, T J = 150 ° C)
Forward Transconductance (V DS = 7.0 Vdc, I D = 6.0 Adc)
V GS(th)
R DS(on)
V DS(on)
g FS
2.0
?
?
?
?
4.0
2.7
5.4
0.10
1.3
?
5.0
4.0
?
0.15
2.2
1.9
?
Vdc
mV/ ° C
Ohm
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
410
130
25
500
180
50
pF
SWITCHING CHARACTERISTICS (Note 2)
Turn ? On Delay Time
t d(on)
?
7.0
10
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 30 Vdc, I D = 12 Adc,
V GS = 10 Vdc,
R G = 9.1 Ω )
t r
t d(off)
t f
?
?
?
34
17
18
60
30
50
Gate Charge
(See Figure 8)
(V DS = 48 Vdc, I D = 12 Adc,
V GS = 10 Vdc)
Q T
Q 1
Q 2
?
?
?
12.2
3.2
5.2
17
?
?
nC
Q 3
?
5.5
?
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage (Note 1)
Reverse Recovery Time
(See Figure 15)
Reverse Recovery Stored
Charge
(I S = 12 Adc, V GS = 0 Vdc)
(I S = 12 Adc, V GS = 0 Vdc, T J = 150 ° C)
(I S = 12 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ μ s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
1.0
0.91
56
40
16
0.128
1.6
?
?
?
?
?
Vdc
ns
μ C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
L D
?
3.5
?
nH
(Measured from the drain lead 0.25 ″ from package to center of die)
4.5
Internal Source Inductance
(Measured from the source lead 0.25 ″ from package to source bond pad)
L S
?
7.5
?
nH
1. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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2
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